a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 1.0 ma 50 v bv ceo i c = 5.0 ma 20 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 28 v 1.0 ma h fe v ce = 5.0 v i c = 100 ma 15 120 --- p g v cc = 12.5 v p out = 0.5 w f = 1025 - 1150 mhz 10 db npn silicon rf power transistor avd0.5s description: the asi avd0.5s is designed for class a, dme/tacan applications up to 1150 mhz. features: ? class a operation ? p g = 10 db at 0.5 w/1150 mhz ? omnigold ? metalization system maximum ratings i c 300 ma v ce 20 v p diss --- w t j -65 o c to +200 o c t stg -65 o c to +150 o c jc 35.0 o c/w package style .280 4l stud minimum inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 b c d e f g a maximum .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm h .245 / 6.22 .255 / 6.48 dim 1.010 / 25.65 1.055 / 26.80 i j .217 / 5.51 .220 / 5.59 k .175 / 4.45 .285 / 7.24 .275 / 6.99 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 g k h f e d c b 45 a #8-32 unc i j c b e e
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